Co_(0.8)Zn_(0.2)Fe_2O_4及其磁电复合薄膜的制备与表征

Preparation and magnetoelectric characterization of Co_(0.8)Zn_(0.2)Fe_2O_4 composite thin films

采用溶胶-凝胶法制备Zn2+取代钴铁氧体Co0.8Zn0.2Fe2O4及Co0.8Zn0.2Fe2O4/(Ba0.85Ca0.15)(Zr0.1Ti0.9)O3磁电复合薄膜(CZFO/BCZT)。利用X射线衍射仪(XRD)、场发射扫描电子显微镜(FE-SEM),拉曼光谱仪及振动样品磁强计(VSM)等对样品进行表征。研究表明,沉积在Pt(111)/Ti/SiO2/Si衬底上的CZFO薄膜为多晶结构,无明显择优取向,处于压应变状态。磁场平行于CZFO薄膜表面的饱和磁化强度和矫顽力分别为405emu/cm3和780×79.577A/m,其矫顽力高于CZFO粉体样品。制备的磁电复合薄膜结晶质量良好,多层纳米结构清晰完整。

Zn2＋ doped cobalt ferrite and the Coo. 8 Zno. z Fez 04 / （Ba0. 85 Ca0. ,3 ） （Zr0.1Ti0. 9 ） 03 magnetoelectric composite thin films （CZFO/BCZT） were prepared via a Sol-gel process. The samples were characterized by X-ray diffraction （XRD）, field-emission scanning electron microscope （FE-SEM）, Raman spectrometer and vibrating sample magne- tometer （VSM）. The results show the CZFO thin film deposited on Pt（111）/Ti/SiOz/Si substrate exhibit a good crystalline quality with pure phase and no obvious preferred orientation under a compressive strain state. The satura- tion magnetization （Ms） and coercive field （Hc） are 405 emu/cm3 and 780 × 79. 577 A/m respectively with the ex- ternal magnetic field applied parallel to the thin film surface. The CZFO thin film, by contrast, exhibit a higher Ho compared with the CZFO powder. The magnetoelectric composite thin films also exhibit good crystalline quality and obvious interface.