静电纺丝制备n型和p型多晶结构ZnO纳米纤维及器件

Fabrication of N-type and P-type Polycrystaline ZnO Nanofibers via Electrospinning and Applications

通过静电纺丝技术制备镧和铈掺杂的p型ZnO纳米纤维,运用SEM对样品的表面形貌进行表征。XRD结果表明,稀土元素掺入了ZnO晶格内,两种掺杂的纳米纤维以ZnO相为主相,拉曼图谱的检测结果也表明铈掺入了ZnO晶格中。伏安特性的检测结果表明,ZnO纳米材料具有良好的光电效应,经掺杂后光电效应变差。典型的场效应曲线检测表明镧及铈掺杂的ZnO是典型的p型半导体材料,经12个月后再次检测证明其具有良好的稳定性。通过二次双层纺丝的方法制备了镧及铈掺杂的ZnO同质结。由p型和n型ZnO组成的同质结表现出非常好的整流效应,开启电压为3V。

La and Ce doped ZnO p-type nanofibers were fabricated by electrospinning,and the morphologies were investigated in detail.XRD image showed that rare earth elements have been doped in zinc oxide lattice,which is also indicated by Raman spectrum.The measurement of I-V characteristic showed that ZnO nanofibers had a good photoelectric effect,and photoelectric effect deterioration after doping.Theresult of field effect curve detection showed that La and Ce doped zinc oxide nanofibers are stable p-type semiconductor material.The field effect curves of these samples were also measured after 12 months,and no significant change was observed,indicating that the electrospun p-type ZnO nanofibers are stable.Homojunction based on p-type and n-type ZnO nanofibers was also fabricated via electrospinning,the I-V characteristic of the p-n homojunction device shows typical rectifying diode behavior and the turn-on voltage was about 3V.