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重复过流冲击下IGBT的性能退化研究 被引量:2

Performance Degradation Research on IGBT under Repetitive Over-Current Conditions
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摘要 实际应用中,功率变流器经常会发生过流,重复的过流冲击会造成其功率器件绝缘栅型双极性晶体管(IGBT)的性能退化,并形成累积损伤,最终导致失效,而突然的失效会带来经济损失和安全问题,故需对重复过流冲击下IGBT的性能退化进行研究,建立相应的在线监测方法.针对目前对IGBT在重复过流下性能退化的研究较欠缺,搭建了过流冲击的实验平台来实现IGBT的重复过流冲击实验;采集重复过流冲击过程中IGBT外部端子的电气量,并提出相应的新的性能退化指标——导通电阻.结果表明:重复过流冲击会造成IGBT的性能退化,影响其外部电气特性;提出的退化指标——导通电阻明显地表征了IGBT内部累积损伤的程度. In the practical application, over-current conditions often emerge during the operation of power converters. The repetition of over-current conditions is responsible for the performance degradation and cumulative damage of power devices(IGBTs), which eventually leads to a failure. Since sudden failures will cause safety issues and economic losses, it is necessary to investigate the performance degradation of IGBT under repetitive over-current conditions and establish the corresponding on-line monitoring approaches. However, the research about performance degradation of IGBT under repetitive over-current conditions is insufficient. An experimental platform was presented, with which a series of repetitive overcurrent experiments had been completed. In the meantime, terminal electrical characteristics of IGBT were acquired to extract a new aging indicator, on resistance. The experimental results showed that the performance of IGBT degraded under repetitive over-current conditions, which affected the terminal electrical characteristics of IGBT. And the proposed aging indictor, on resistance, evidently showed the degree of accumulative damage in IGBT.
作者 刘丹 徐正国
出处 《上海应用技术学院学报(自然科学版)》 2015年第3期232-235,253,共5页 Journal of Shanghai Institute of Technology: Natural Science
基金 国家自然科学基金资助项目(61473254 61134001) 国家高技术研究发展计划资助项目(2012AA06A404)
关键词 绝缘栅型双极性晶体管(IGBT) 过流 退化 导通电阻 insulated gate bipolar transistors(IGBT) over-current degradation on resistance
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参考文献10

  • 1Yang S, Bryant A, Mawby P, et al. An industry- based survey of reliability in power electronic conver- ters[J]. Industry Applications, IEEE Transactions on, 2011, 47(3): 1441-1451.
  • 2周雒维,吴军科,杜雄,杨珍贵,毛娅婕.功率变流器的可靠性研究现状及展望[J].电源学报,2013,11(1):1-15. 被引量:65
  • 3Sonnenfeld G, Goebel K, Celaya J R. An agile acce- lerated aging, characterization and scenario simulation system for gate controlled power transistors[C]// AUTOTESTCON, 2008 IEEE. Salt Lake City, UT: IEEE, 2008: 208-215.
  • 4Buh G H, Chung H J, Kuk Y. Real-time evolution of trapped charge in a SiOz layer: an electrostatic force microscopy study[J]. Applied Physics Letters, 2001, 79(13): 2010-2012.
  • 5Lefebvre S, Khatir Z, Saint-Eve F. Experimental behavior of single-chip IGBT and COOLMOS devices under repetitive short-circuit conditions[J]. Electron Devices, IEEE Transactions on, 2005, 52(2): 276- 283.
  • 6Arab M, Lefebvre S, Khatir Z, et al. Experimental investigations of trench field stop IGBT under repeti- tive short-circuits operations[C]//Power Electronics Specialists Conference, 2008. Rhodes, Greece:IEEE, 2008: 4355-4360.
  • 7Pietranico S, Lefebvre S, Pommier S, et al. A study of the effect of degradation of the aluminium metalli- zation layer in the case of power semiconductor devices[J]. Microelectronics Reliability, 2011, 51 (9) : 1824-1829.
  • 8黎振浩.变频器过流故障原因分析及处理方法[J].中国新技术新产品,2013(12):173-174. 被引量:3
  • 9LinderS,肖曦,李虹.功率半导体——器件与应用[M],1版.北京:机械工业出版社,2009.
  • 10Berkani M, Lefebvre S, Khatir Z. Saturation current and on-resistance correlation during During repetitive short-circuit conditions on SiC JFET transistors[J]. IEEE Transactions on Power Electronics, 2013, 28 (2) : 621-624.

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