Al/AlO_x/Al隧道结简化制备技术

Simplified fabrication on Al/AlO_x/Al tunnel junction

研究了一种在高阻硅衬底上Al/Al Ox/Al超导隧道结简化制备技术。通过一次光刻镀膜完成隧道结结区的确定和上引线的制备,工艺流程简单重复。在0.3K温度下测量了隧道结样品的I-V特性,能隙电压Vg为0.37m V,超导临界电流密度约为12A/cm2。

We studied a simplified technique of fabricating Al/AlOx/Al superconducting tunnel junctions on high resistivity silicon substrate. The definition of the junction area and fabrication of the top electrode could be completed by only one lithogra- phy, which was quite simple and repeatable. The junction I - V characteristic was measured at 0.3K, which showed that the en- ergy gap voltage was 0.37 mV and the superconducting critical current density was about 12 A/cm2.