摘要
6英寸Sb(锑)基板是国内半导体分立器件使用的主力材料,此材料主要供客户外延使用.但近期某司的基板在外延后出现表面类似气泡状的缺陷,此缺陷异常,无法抛光去除.文章主要研究此外延缺陷与硅晶体的关系,通过试验分析此异常缺陷出现的原因,找到解决的方法.
The 6 inch Sb wafer is the dominating substrate for Discrete Device used for EPI. Bubble-liked defects on this kind of substrate after EPI can not be removed by polishing. Through the experimental analysis of root cause of defects, the paper aims to examine the relationship between EPI defects and silicon crystal so as to find the possible solution.
出处
《上海有色金属》
CAS
2015年第2期75-78,共4页
Shanghai Nonferrous Metals
关键词
基板
外延
气泡状缺陷
外延缺陷
硅晶体
substrate
epitaxy
bubble-liked defects
EPI defects
silicon crystal
