InGaN p-i-n同质结太阳能电池性能的理论分析

Theoretical calculation of the performance of InGaN p-i-n homojunction solar cells

基于复合速率连续性方程,理论分析了InGaN p-i-n同质结太阳能电池的性能.结果表明,随着In组分含量增加,载流子收集效率、填充因子和开路电压均减小,短路电流密度增大,这些因素导致太阳能电池转换效率先增大后减小.当In摩尔分数大约为0.6时,太阳能电池转换效率达到最大.当缺陷密度低于1016 cm-3时,缺陷密度对载流子收集效率和短路电流密度几乎没有影响,而当缺陷密度高于1017 cm-3时,随着缺陷密度增大,载流子收集效率、短路电流密度、开路电压、填充因子和转换效率均减小.In摩尔分数越高,缺陷密度对太阳能电池性能的影响越大.

The performance of InGaN p-i-n homojunction solar cells is investigated theoretically based on the continuity equation of recombination rate.With the increase of In content,the collection efficiency,fill factor and open circuit voltage all decrease,but the short circuit current density increases.These factors cause that the conversion efficiency increases until it reaches a maximum at In content of about 0.6,after which it monotonically decreases.When it is smaller than 1016 cm-3,the defect density has almost no influence on the cell performance.Nevertheless when it is larger than 1017 cm-3,the defect density has great influence on the cell performance.The collection efficiency,short circuit current density,open circuit voltage,fill factor and conversion efficiency all decrease as the defect density increases.The higher In content of InGaN,the larger the effect of defect density on the cell performance is.