现代纳米集成电路质子单粒子效应研究进展

Research Progress of Proton Single-Event-Effects on Nano-ICs

近年来,随着半导体工艺技术的迅速发展,质子单粒子效应研究的重要性上升到了一个新的高度。综述了国际上纳米集成电路质子单粒子效应研究的主要进展,如低能质子成为纳米集成电路单粒子效应和软错误率的主要贡献因素,中高能质子与新型器件材料(如钨)核反应研究成为质子单粒子效应新的热点问题,介绍了中国原子能科学研究院在纳米集成电路低能质子实验方面开展的相关工作。

With the rapid development of semiconductor technology, the importance of proton single event effects （SEEs） research has reached a new height. In this review, the progress of proton SEEs research on nanometer integrated circuits is presented. Low energy proton induced SEEs and Soft Error Rate （SER） can be a significant contribution to total proton SEEs and SER in space, and proton interactions with new device materials like tungsten become a research focus in the field of proton induced SEEs. The research work in low energy proton induced SEEs experiment on nanometer-scale semiconductor devices done in China Institute of Atomic Energy is introduced.