磁控溅射制备VO_2薄膜及其红外相变特性

Infrared Phase Transition Properties of VO_2 Thin Films by Magnetron Sputtered Method

采用直流磁控溅射法与氧化法热处理相结合的工艺,在Si基底上制备VO2薄膜,通过扫描电镜（SEM）、X射线衍射（XRD）、X射线电子能谱（XPS）、傅里叶变换红外光谱（FTIR）透射率测试,分析了VO2薄膜截面结构、晶相成分、成分价态及红外透射率相变特性。实验分析表明,采用直流磁控溅射与氧化热处理相结合的方法,可获得主要成分为具有明显择优取向单斜金红石结构VO2（011）晶体的氧化钒薄膜,其红外透射率具有明显相变特性,相变中心温度为57.5℃,3~5μm、8~12μm波段的红外透射率对比值达到99.5%,适合应用于红外探测器的激光防护研究。

VO2thin films were prepared by DC magnetron sputtering combined with oxidational annealing on Si substrate.SEM,XRD,XPS and FITR were employed to study the structure of cross-section,phase composition,valence and infrared transmission properties of the VO2 thin films.The results of analysis show that,monoclinic rutile structure VO2 films well oriented towards（011）can be obtained through the DC magnetron sputtering combined and oxidational annealing.The VO2 thin films possessed an obvious phase transition properties,the central transition temperature is 57.5℃,and the range of the change of infrared transmission rate at 3~5μmand 8~12μm has reached to 99.5%.VO2 thin films which have obvious phase transition properties in infrared transmission are ideal materials for the research in protecting infrared detector of laser attacking.