Er离子注入GaN薄膜的阴极荧光机制研究

Study on the Mechanism of Cathode Fluorescence of Er Ions Implanted GaN Thin Films

采用离子注入方法制备了一系列不同Er离子剂量的GaN薄膜,并在不同温度、不同气氛下进行了退火处理。深入研究了退火温度和退火气氛对阴极荧光谱的影响机制和阴极荧光中的发光猝灭现象,获得了优化的退火条件。结果表明,当Er离子注入剂量达到1×1015cm-2时,Er离子的发光强度最高;当Er离子注入剂量达到5×1015cm-2时,出现发光猝灭现象。

Different content of Er ions implanted GaN were prepared and annealed at different temperature and atmosphere. The effect mechanism of annealing temperature and atmosphere were investigated. The results show that as the Er ions dose was 1 × 1015cm- 2,the luminescence intensity is the strongest.When the Er ions dose is 5 × 1015cm- 2,the luminescence quenching could be observed.