不同制造工艺铜箔电爆驱动飞片能力

Effects of Fabrication Process on Drive Capability of Flyer with Copper Bridge Foil

为研究真空沉积制备的爆炸桥箔(铜箔)致密性和晶体尺寸对爆炸箔驱动飞片能力的影响,采用X射线衍射(XRD)对电子束蒸发和磁控溅射两种工艺制备铜箔的晶型结构进行了表征。用光刻成型的方式将铜箔制成爆炸桥箔,采用光子多普勒测速系统(PDV)测试了爆炸桥箔在不同电压条件下驱动飞片的速度,采用升降法实验对比分析了两种爆炸桥箔驱动飞片起爆六硝基茋-Ⅳ的阈值能量。结果表明,磁控溅射工艺制备的铜箔晶体尺寸小于电子束蒸发工艺制备的铜箔晶体尺寸,电阻率高17%,沉积速率是电子束蒸发铜箔的2.4倍。制成的爆炸桥箔驱动飞片能力略强于电子束蒸发工艺制备的爆炸桥箔驱动飞片能力,且起爆六硝基茋-Ⅳ需要的能量也更低。

In order to study the effects of the crystal size and compactness of copper film on the drive ability of flyer with the exploding foil,X-ray diffraction was applied to analyze the structure of copper film deposited by e-beam evaporated deposition and magnetron sputtering.The exploding bridge foil was fabricated with photolithography.The velocity of the flyer under different voltage was investigated by physical vapor deposition to study the ability of flyer driven by exploding bridge film.The up-and-down method was implemented to analyze the threshold exploding energy of hexanitrostilbene-Ⅳ,which was successfully initiated by flyer.It is found that the copper film deposited by magnetron sputtering has smaller crystal,and is more than 17%higher resistivity,and 2.4 times faster deposition rate than that by e-beam evaporated deposition.It reveals that the capacity of flyer driven by copper film with magnetron sputtering is better than e-beam evaporated deposition,showing the lower threshold energy to initiate hexanitrostilbene-Ⅳ.