期刊文献+
任意字段
题名或关键词
题名
关键词
文摘
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息

Experimental study of GaN based blue light emitting diodes with a thin AlInN layer in front of the electron blocking layer 被引量：1

Experimental study of GaN based blue light emitting diodes with a thin AlInN layer in front of the electron blocking layer
原文传递
导出
摘要 The Ga N based blue light emitting diodes(LEDs) with a thin Al In N layer inserted in front of the electron blocking layer(EBL) are experimentally studied.It is found that inserting a thin EBL can improve the light output power and reduce the efficiency droop compared with the conventional Al Ga N counterparts.Based on numerical simulation and analysis,the improvement on the electrical and optical characteristics is mainly attributed to the reduction of the electron leakage current,which increases the concentration of carriers in the quantum well(QW) when the thin Al In N layer is used.
作者 路纲 王波 葛运旺
机构地区 Department of Electrical Engineering and Automation
出处 《Optoelectronics Letters》 EI 2015年第4期248-251,共4页 光电子快报（英文版）
基金 supported by the Key Scientific Research Project of Higher Education of Henan Province(No.15A510033)
关键词 blocking inserted inserting attributed leakage thick crystalline nucleation lifetime Heidelberg 蓝光发光二极管 GaN 阻挡层 电子 实验 N层 数值模拟分析 光输出功率
分类号 TN312.8 [电子电信—物理电子学]
  • 相关文献

参考文献21

  • 1Akyol F., Nath D. N., Krishnamoorthy S., Park P. S. and Rajan S., Applied Physics Letters 100, l 11118 (2012).
  • 2Fu Y.-Y., Dai L.-P., Wang S.:Y. and Zhang G.-J., Opto- electronics Letters 9, 278 (20i 3).
  • 3Shen Y. C., MOiler Ct O., Watanabe S., Gardner N. F., Munkholm A. and Krames M. R., Applied Physics Let- ters 91, 141101 (2007).
  • 4Gardner N. F., Mtiller G. O., Shen Y. C., Chen G., Wa- tanabe S., Gotz W. and Krames M. R., Applied Physics Letters 91, 243506 (2007).
  • 5Kim M. H., Schubert M. F., Dai Q., Kim J. K., Schube/t E. F., Piprek J. and Park Y., Applied Physics Letters 91, 183507 (2007).
  • 6K. A. S. M. Ehteshamul Haque, Optoelectronics Letters 9, 177 (2013).
  • 7Xie J., Ni X., Fan Q., Shimada R., Ozgur U. and Morkoc H., Applied Physics Letters 93, 121107 (2008).
  • 8Wu L. J., Li S. T., Liu C., Wang H. L., Lu T. P., Zhang K., Xiao G. W., Zhou Y. G., Zheng S. W., Yin Y. A. and Yang X. D., Chinese Physics B 21, 068506 (2012).
  • 9Monemar B. and Semelius B. E., Applied Physics Let-.ters 91, 181103 (2007).
  • 10Wang C. H., Chen J. R., Chiu C. H., Kuo C. H., Li Y. L., Lu T. C. and Wang S. C., IEEE Photonics Technology Letters 22, 236 (2010).

同被引文献19

  • 1张燕,龚海梅,白云,陈亮,许金通,汤英文,游达,赵德刚,郭丽伟,李向阳.空间用紫外探测及AlGaN探测器的研究进展[J].激光与红外,2006,36(11):1009-1012. 被引量：18
  • 2YAN Qi-rong, ZHANG Yong, LI Jun-zheng. Study of dual- blue light-emitting diooles with asymmetric AIGaN gradedbarriers[ J]. Optoelectronics Letters, 2014,10 ( 4 ) ; 258- 261.
  • 3Li C, Bao X, Xu J, et al. Optical characterization of GaN/ AIGaN bilayer by transmission and reflection spectra[J] Journal of Applied Physics,2010,108(6):063104.
  • 4Foresi J S,Moustakas T D. Metal contacts to gallium ni- tride[J]. Applied Physics Letters, 1993,62 ( 22 ) : 2859- 2861.
  • 5Smalc-Koziorowska J, Grzanka S, Litwin-Staszewska E, et al. Ni-Au contacts to p-type GaN-Structure and proper- ties[J]. Solid-State Electronics, 2010,54( 7 ) : 701-709.
  • 6Gunning B P,Fabien C A M,Merola J J,et al. Comprehen- sive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AIGaN[J]. Journal of Applied Physics, 2015,117(4) : 045710-045710-11.
  • 7Kamler G, Borysiuk J, Weyher J L, et al. Selective etching and TEM study of inversion domains in Mg-doped GaN epitaxial layers[J]. Journal of Crystal Growth, 2005,282 (s 1-2) :45-48.
  • 8Ho J K, Jong C S, Chiu C C, et al. Low-resistance ohmic contacts to p-type GaN[J]. Applied Physics Letters, 1999,74(9) : 1275-1277.
  • 9Zhou L, Lanford W, Ping A T, et al. Low resistance Ti/Pt/ Au ohmic contacts to p-type GaN[J]. Applied PhysicsLetters, 2000,76(23) :3451-3453.
  • 10Kim H K,Adesida I,Seong T Y. Interfacial reaction effect on the ohmic properties of a Pt/Pd/Au contact on p-type GaN[J]. Journal of Vacuum Science & Technology A Vacuum Surfaces & Films,2004,22(4) ;1101-1104.

引证文献1

Optoelectronics Letters
2015年 第4期

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部