摘要
半导体激光器封装工艺过程对于激光器的输出特性、寿命等性能有重要影响,其中焊料的选择和焊接工艺是最关键的因素。本文采用磁控溅射的方法,在WCu热沉上制备了Au80Sn20合金焊料,取代了传统的In焊料,并对焊接工艺进行了改进。国外沉积的和我们制备的Au80Sn20合金焊料焊接DL芯片后的性能参数很接近。充分说明双靶分层溅射镀膜可以实现二极管激光器的封装要求,从而为优化半导体激光器制备工艺和提高半导体激光器的性能奠定基础。
Diode laser packaging technology has important influence on laser performances,such as the laser output characteristics and life time,etc,and the choice of solder and welding process are the most critical factors. Au80Sn20 alloy solder was prepared on WCu heat sink by using magnetron sputtering method,and it replaced the traditional In solder,and then the welding process was improved. Comparative study shows that the performance parameters of DL chip welded by Au80Sn20 solder alloy are very close to that of the import deposition. This means that the double-target layered sputter coating can achieve high power diode laser package,which lay the foundation of optimizing the preparation technology of diode laser and improving the performance of diode laser.
出处
《激光与红外》
CAS
CSCD
北大核心
2015年第7期757-760,共4页
Laser & Infrared
基金
国家自然科学基金重大项目(No.60890201)资助
