摘要
研究了基于Be离子注入技术的平面型和Cd扩散技术的台面型锑化铟红外焦平面阵列(IRFPA)探测器芯片工艺流程。并进行了芯片I-V、成像结果等对比测试,Be离子注入平面型器件和扩散台面型芯片的性能水平相当,具备一定的工程应用水平。
Technological processes of InSb infrared focal plane arrays（ IRFPA） detector chips with planar PN junctions based on Be ion implantation and mesa PN junctions based on Cd diffusion were studied in this paper. Comparison tests were carried out for I-V curve and imaging quality of two processes. Experimental results show that chip performances with planar PN junctions based on Be ion implantation are comparable with that with mesa PN junctions based on Cd diffusion,which provide a reference for engineering application.
出处
《激光与红外》
CAS
CSCD
北大核心
2015年第7期814-816,共3页
Laser & Infrared
