InSb分子束外延原位掺杂技术研究

In-situ doping technology research of InSb film growth by molecular beam epitaxy

对InSb分子束外延薄膜的本征掺杂、N型掺杂以及P型掺杂进行了研究,其中分别以Be作P型以及以Si、Te作N型的掺杂剂。实验采用半绝缘的GaAs衬底作为InSb分子束外延用衬底,通过采用低温生长缓冲层技术降低大失配应力,获得高质量InSb外延膜。实验样品采用霍尔测试以及SIMS测试掺杂浓度和迁移率分析掺杂规律、掺杂元素偏聚和激活规律的影响因素。

In this paper,the intrinsic doping,n-type doping and p-type doping technology of the InSb film growth by molecular beam epitaxy are studied. Be is used as the p-type doping element and Te,Si are used as the n-type doping element. Semi insulating GaAs is used as the substrate of InSb layer growth by molecular beam epitaxy. Buffer layer growth under low temperature can reduce the large mismatch stress,and high quality InSb films can be obtained.The doped concentration and migration rate of the experimental samples were measured by Hall and SIMS,and the influence factors of doping rules,doping element segregation and activate rules are analyzed.