摘要
研究了制革中常见鞣制材料、复鞣材料及加脂材料对皮革抗静电性能的影响，鞣制后坯革样品体积电阻率数量级为10^2-10^3Ω·m，采用自主建立的抗静电简易检测方法测试鞣制样品吸附纸片数为4～5片；复鞣处理对皮革的抗静电性能影响较小，复鞣后样品体积电阻率数量级为10^3～10^4Ω·m，吸附纸片数为4～5片；加脂对成革抗静电性能影响十分明显，加脂处理后样品体积电阻率数量级为10^7～10^8Ω·m，吸附纸片数为10～11片。研究表明皮革为有机半导体，具有一定的抗静电性能。
The effects of normal tanning, retanning and fatliquoring materials on antistatic property of leather were studied. Volume resistivity of tanned leather was 10^2 - 10^3Ω· m. Using homemade antistatic examination method, the number of adsorbed scraps of paper was 4 - 5. Retanning materials had a little influence on antistatic property of leather. Volume resistance of retanned leather was 10^3 - 10^4Ω· m, the number of adsorbed scraps of paper was 4 -5. Fatliquoring materials had a great influence on antistatic property of leather. Volume resistance of fatliquored leather was 10^7 - 10^8Ω·m, the number of adsorbed scraps of paper was 10 - 11. The results show that leather is an organic semiconductor, which has a certain antistatic property.
出处
《中国皮革》
CAS
北大核心
2015年第13期5-8,共4页
China Leather
关键词
鞣制
复鞣
加脂
抗静电
tanning
retanning
fatliquoring
antistatic property
