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氧化物稀磁半导体的本征铁磁性及其应用 被引量:2

Intrinsic ferromagnetism and application in oxide-based diluted magnetic semiconductors
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摘要 电子具有电荷和自旋两个重要属性,传统的半导体器件仅利用了电子的电荷属性,稀磁半导体材料可以同时利用电子的电荷和自旋属性,成为未来半导体自旋电子器件的关键材料之一。人们期望通过对稀磁半导体材料的研究获得具有非易失、多功能、超高速和低功耗等特性的半导体自旋器件,这对材料和信息技术领域都将是一场质的革命。
出处 《中国科学基金》 CSSCI CSCD 北大核心 2015年第4期285-288,共4页 Bulletin of National Natural Science Foundation of China
基金 国家杰出青年科学基金项目(51025101)资助
关键词 氧化物稀磁半导体 非补偿p-n共掺 自旋注入 磁电阻效应 oxide-based diluted magnetic semiconductors non-compensated p-n codoping spin injection magnetoresistance effect
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  • 1Munekata H, Ohno H, yon Molndr S, Segmtiller A, Chang I.L,Esaki I: Diluted magnetic III- V semiconductors. Phys Rev Lett, 1989,63 (17) : 1849- 1852.
  • 2Ohno H, Shen A, Matsukura F,Oiwa A, Endo A, Katsumoto S,Iye Y. (Ga,Mn)As: A new diluted magnetic semiconduc- tor based on GaAs. Appl Phys I.ett,1996,69(3):363-365.
  • 3Ohno Y, Young DK, Besehoten B, Matsukura F, Ohno H, Awsehalom DD. Electrical spin injection in a ferromagnetic semiconductor heterostructure. Nature, 1999, 402 (6763): 790-792.
  • 4Ohno H, Chiba D, Matsukura F, Omiya T, Abe E, Died T, Ohno Y,Ohtani K. Electric-field control of ferromagnetism. Nature,2000,408(6815):944 946.
  • 5Dietl T, Ohno H, Matsukura F, Cibert J, Ferrand D. Zener model description of ferromagnetism in zine-blende magnetic semiconductors. Seience,2i300,287(5455) : 1019 1022.
  • 6Sharma P, Gupta A, Rao KV,()wens FJ,Sharma R, Ahuja R,Guillen JMO,Johansson B,Gehring GA. Ferromagnetism above room temperature in bulk and transparent thin films of Mn-doped ZnO. Nat Mater.2003,2(10):673 677.
  • 7Coey JMD, Venkatesan M, Fitzgerald CB. Donor impurity band exchange in dilute ferromagnetic oxides. Nat Mater, 2005,4(2) :173-179.
  • 8Behan AJ, Mokhtari A, Blythe HJ, Score D, Xu XH, Neal JR,Fox AM,Gehring GA. Two magnetic regimes in doped ZnO corresponding to a dilute magnetic semiconductor and a dilute magnetic insulator. Phys Rev l.ett, 2008, 100 (4) :047206.
  • 9Jiang F,Xu X,Zhang J,Fan X,Wu H,Alshammari M,Feng Q,Blythe HJ,Score DS, Addision K, AI-Qahtani M, Gehring GA. Room temperature ferromagnetism in metallic and insu- lating (In1 : Fe, )z 03 thin films. J Appl Phys, 2011, 109 (5) :053907.
  • 10Dietl T. A ten-year perspective on dilute magnetic semicon- ductors and oxides. Nat Mater,2010,9(12):965 974.

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