摘要
针对电流注入型SOI光开关在切换时难以克服的消光比变差的问题,提出了一种非对称的开关结构设计。然后依照实际器件的结构建立了SOI光开关的3D光学模型,对光开关中3D光场传输和输出光功率进行了模拟与分析。最后运用该模型对SOI光开关在电流切换时的消光比变化的问题进行了比较深入的研究,计算结果表明,提出的非对称的开关结构可以将SOI电光开关的消光比提高5dB左右。
A new asymmetric structure design was proposed for the extinction ratio enhancement of a SOI optical switch employing carrier injection effect.A 3D-BPM model was established according to the actual device structure which can give the 3Dfull view of the opticalfield distribution in the SOI optical switch.Using this model,detailed analysis was performed on the extinction ratio of the SOI electro-optical switch after current injection.It is indicated that the extinction ratio of the optical switch can be improved by 5dB by employing the asymmetric structure design.
出处
《半导体光电》
CAS
北大核心
2015年第3期375-378,共4页
Semiconductor Optoelectronics
