非晶ZSO透明导电薄膜的P-MBE制备

Fabrication of ZSO Transparent Conductive Thin Films by P-MBE

采用射频等离子体辅助分子束外延技术(P-MBE),在石英玻璃基片上制备了高纯度的透明导电ZSO薄膜,利用X射线衍射、原子力显微镜、Hall测试仪和光谱测量等表征技术,研究了射频功率对ZSO的结晶性能、表面形貌、电学参数及透射率等的影响。研究结果表明,在室温350W离化气源功率下,非晶态ZSO薄膜表面平整度高,室温电子迁移率达11.47cm2·V-1·s-1,电阻率为1.497Ω·cm,光学禁带宽度为3.53eV。分析得出,采用此工艺制备的非晶ZSO透明导电薄膜,具有优良的光电性能,是制备透明导电薄膜晶体管的优良宽禁带半导体材料。

High purity ZSO transparent conductive thin films were fabricated on quartz substrates by plasma-assisted P-MBE.The effects of radio-frequency power on the crystalline phases,the morphology,the photoelectric performance and transmissivity were characterized with XRD,AFM and Hall measurement.Test results indicate that under the 350 W ionized power at room temperature,the amorphous ZSO films own high flat surface,a high electron mobility of 11.47cm2·V-1·s-1 and a low resistivity of 1.497Ω·cm and the optical Egof ZSO films is 3.53 eV.