期刊文献+
任意字段
题名或关键词
题名
关键词
文摘
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息

分布式布拉格反射与小面积金属接触复合三维电极结构的AlGaN基紫外LEDs设计

Design of Vertical AlGaN-based Ultraviolet LEDs with Distributed Bragg Reflectors-pixed Metal Combined Electrodes
下载PDF
导出
摘要 AlGaN基紫外LEDs具有高光子能量和短波长的特点,在诸多领域有着广阔应用前景.结合器件电流分布、温度控制及出光增强等多物理场因素,采用有限元方法设计了一种分布式布拉格反射与小面积金属接触复合三维电极结构的AlGaN基紫外LEDs.计算分析表明,相比于传统垂直结构器件,该器件结构具有高效的电流注入效率、良好的散热水平及较高的出光效率,有望大幅度提高紫外发光器件的光电转换效率. AlGaN-based ultraviolet light-emitting diodes （UV LEDs） enjoy enormous potential for a wide range o{ applications. However, the efficiency of UV LEDs remains low. In this work, a novel vertical structure with distributed bragg reflectors-pixel metal combined electrodes was designed to improve the performance of ultraviolet LEDs, by utilizing the coupling relationship of muhi- physics：current distribution, temperature control, and light extraction. Numerical analysis results indicate that the current distribu- tion,heat dissipation,and light extraction efficiency in such structures are much better than those in the traditional vertical structure UV LED devices. As a result,the output power is expected to be improved by 204% and 6640/oo at the injection current of 20 mA and 100 mA, respectively.
作者 袁照容 杨旭 李金钗 李书平 周颖慧 康俊勇
机构地区 厦门大学物理与机电工程学院福建省半导体材料及应用重点实验室
出处 《厦门大学学报（自然科学版）》 CAS CSCD 北大核心 2015年第4期504-511,共8页 Journal of Xiamen University：Natural Science
基金 国家重点基础研究发展计划(973计划)(2012CB619301 2011CB25600) 国家高技术研究发展计划(863计划)(2014AA032608) 国家自然科学基金(U1405253 61227009 11204254 11404271)
关键词 ALGAN 紫外LED 垂直结构 多物理场 有限元 A1GaN UV LED vertical structure multi-physics finite element method
分类号 O472 [理学—半导体物理]
  • 相关文献

参考文献19

  • 1Nishida T,Saito H,Kobayashi N.Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN[J].Applied Physics Letters,2001,79(6):711.
  • 2Taniyasu Y,Kasu M,Makimoto T.Aluminum nitride deep-ultraviolet lightemitting diodes[J].NTT Technical Review,2006,4(12):54-58.
  • 3Nishida T,Saito H,Kobayashi N.Milliwatt operation of AlGaN-based single-quantum-well light emitting diode in the ultraviolet region[J].Applied Physics Letters,2001,78(25):3927.
  • 4Würtele M A,Kolbe T,Lipsz M,et al.Application of GaN-based ultraviolet-C light emitting diodes—UV LEDs—for water disinfection[J].Water Research,2011,45(3):1481-1489.
  • 5Dobrinsky AShatalov MGaska R,et al.Physics of visible and UV LED devices[C]∥Lester Eastman Conference on High Performance Devices(LEC).New York:IEEE,2012:1-4.
  • 6Shur M S,Gaska R.Deep-ultraviolet light-emitting diodes[J].Electron Devices,IEEE Transactions on,2010,57(1):12-25.
  • 7Piprek J.Semiconductor optoelectronic devices:introduction to physics and simulation[M].UCSB:Academic Press,2003.
  • 8Chuang S L,Chang C S.A band-structure model of strained quantum-well wurtzite semiconductors[J].Semiconductor Science and Technology,1997,12(3):252.
  • 9Chuang S L,Chang C S.k·p method for strained wurtzite semiconductors[J].Physical Review B,1996,54(4):2491-2504.
  • 10Shapiro S D.Carrier mobilities m silicon empirically related to doping and field[J].Proceedings of the IEEE,1967,55(12):2192-2193.

二级参考文献21

  • 1FADEL M,AZIMM O A, OMER O A ,et al.. A study of some optical properties of hafnium dioxide( HfO2 ) thin films and their applications[ J]. Appl. Phys. A,1998,66:335-343.
  • 2GRILLI F L, MENCHINI F, PIEGARI A,et al.. Al2 O3/SiO2 and HfO2/SiO2 dichroic mirrors for UV solid-state lasers [ J]. Thin Solid Films ,2009,517 : 1731-1735.
  • 3ALVISI M,DI GIULIO M,MARRONE S G,et al.. HfO2 films with high laser damage threshold[J]. Thin Solid Films, 2000,358 ( 1-2 ) :250-258.
  • 4Joint Committe on Powder Diffraction Standards. Diffraction Data File no. 43-1017 [ S]//International Centre for Diffraction Data, Newtown Square, Pennsylvania, USA ,2001.
  • 5HANN R E,SUITCH P R,PENTECOST J L. Monoclinic crystal structures of ZrO2 and HfO2 refined from X-ray powder diffraction data[J]. J. Am. Ceram. Soc. ,1985,68(c):285-286.
  • 6DANILOV A D, KAROL I L. Atmospheric Ozone-Sensation and Reality[ M ]. Leningrad : Gidrometeoizdat, 1991.
  • 7CHILDS C B. Broad-band UV fihers[J]. JOSA,1961,51(8) .895-897.
  • 8RAINER F, LOWDERMILK W H, MILAM D,et al.. Materials for optical coatings in the uhraviolet [ J]. Appl. Opt. , 1985,24 (4) : 496 -500.
  • 9SAFIN R G,GANUTDINOV I S,SABIROV R S,et al.. Solar-blind filter for the uhraviolet region[J]. J. Opt. Technol. , 2007,74(3 ) :208-210.
  • 10PIEGARIA A,PERRONE M R,PROTOPAP M L. Ultraviolet-graded coatings for lasers:surface optical performance [ J ]. Thin Solid Films,2000,373:155-158.

共引文献6

厦门大学学报（自然科学版）
2015年 第4期

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部