摘要
针对一些曲面栅网器件的加工工艺,从实验装置、光刻原理、光刻工艺及参数要求等方面进行了分析,为后续深入开展曲面直写式光刻工艺打下了基础。
According to the lithography process of some curved surface grid device, analyses are carried on from experiment equipment,lithography theory,lithography process and parameter requirements,and intense curved surface direct writing lithography process could be developed based on them afterwards.
出处
《电子工业专用设备》
2015年第6期41-44,共4页
Equipment for Electronic Products Manufacturing
关键词
半导体设备
曲面
直写式
光刻
Semiconductor devices
Curved surface
Direct writing
Lithography
