掺杂浓度和温度对δ掺杂的AlxGa1-xAs/GaAs双量子阱系统电子态结构和子带间光学吸收系数的影响

Effect of Doping Concentration and Temperature on Structure of Electronic State and Intersubband Linear Optical Absorption of δ-Doped Al_xGa_(1-x)As/GaAs Double Quantum Well

在有效质量近似下,通过自洽求解薛定谔方程和泊松方程,计算了在温度不为零时δ掺杂的AlxGa1-x As/Ga As双量子阱系统的电子态结构.研究了温度和掺杂浓度对双量子阱系统子带能级、费米能量、及子带间线性光学吸收系数的影响.研究发现,系统的本征能量随温度升高或随掺杂浓度的增大而增加;费米能量随温度升高而减小,随掺杂浓度的增大而增加;子带间总的吸收系数随温度的升高而减小,随掺杂浓度的增大而增加.除子带间跃迁3->6,4->5随温度升高线性光学吸收系数增加外,其他各主要子带间跃迁随温度升高线性光学吸收系数而减小;各子带间线性光学吸收系数随掺杂浓度的增大而增加.

By solving Schrdinger equation and Poisson equation self-consistently under the effective mass approximation,we calculated the structure of the electronic state of δ-doped AlxGa1-xAs / Ga As double quantum well system at T≠0. We studied the influence of temperature and the doping concentration on the subband energy levels,Fermi energy,and the linear optical absorption coefficient of the intersubband transition. Studies found that the subband energies increase with the increase of the temperature or the doping concentration; the Fermi energy decreases with the increase of the temperature,and increases with the increase of the doping concentration; the total linear optical absorption coefficient for the intersubband transition decreases with the increase of the temperature,and increases with the increase of the doping concentration. Except that the linear optical absorption coefficient increases with the increase of the temperature for the intersubband transitions 3-〉6 and 4-〉5,all other significant linear optical absorption coefficients of intersubband transitions decrease with the increase of the temperature; and the linear optical absorption coefficients of all the intersubband transitions increase with the increase of the doping concentration.