基体温度对线性离子束技术制备α-C∶H薄膜结构和性能的影响

Influences of Substrate Temperature on Structure and Properties ofα-C∶H Thin Film Prepared by Linear Ion Source

采用线性离子束镀膜技术在YG6硬质合金上沉积氢化类金刚石(α-C∶H)薄膜,通过原子力显微镜、Raman光谱仪、球磨仪和洛氏压力仪等研究了基体温度对α-C∶H薄膜微观结构、表面形貌、耐磨性以及膜基结合性能的影响。结果表明:随着基体温度升高,薄膜中sp3键含量和耐磨性能先降低后提高,表面粗糙度先减小后增大;基体温度在80℃时,制备的薄膜最为光滑,而sp3键含量最低,薄膜耐磨性最差;基体温度对膜基结合性能没有明显的影响。

Hydrogenated diamond like carbon（α-C∶H）thin films were deposited on YG6 cemented carbide by linear ion source（LIS）.The effects of substrate temperature on the microstructure,morphology,wear resistance and adhesion between film and substrate of theα-C∶H thin film were investigated using atomic force microscopy（AFM）,Raman spectroscopy,ball milling and Rockwell hardness testing.Results show that the sp3 bond content and wear resistance of theα-C∶ H thin film decreased first and then increased when substrate temperature rose,which was contrary to the surface roughness.The film prepared at substrate temperature of 80℃had the lowest surface roughness and sp3 bond content,its wear resistance was the worst.The substrate temperature had no evident effect on the adhesion between film and substrate.