铟掺杂纳米SnO_2的合成及气敏性能研究

Synthesis and gas sensing property of In-doped SnO_2 nanostructures

采用一步水热法制备出了掺杂铟和未掺杂的球花状SnO2纳米结构。通过扫描电子显微镜(SEM)、X射线粉末衍射(XRD)等手段对所得样品的形貌及晶体结构进行了表征,结果表明制得的SnO2纳米结构由厚度约30nm的纳米片组成,晶型为四方金红石型。以掺杂铟和未掺杂的SnO2样品制作了旁热式气敏元件,用于测试样品对乙醇气体的气敏性能。测试结果显示铟的掺入提高了SnO2样品的灵敏度,同时降低了气敏元件的最佳工作温度。最后,提出了铟掺杂提升SnO2纳米材料的气敏性能的可能机制。

Via a one-step hydrothermal method,In-doped and undoped flower-like SnO2nano-architectures were synthesized.Crystal structures and morphologies of the samples were characterized by X-ray powder diffraction（XRD）,scanning electron microscopy（SEM）,etc.,which revealed that the as-prepared tetragonal rutile SnO2 nanostructures were made up of numerous nanosheets with thickness of 30 nm.Heater-type gas sensors based on In-doped and undoped SnO2 were fabricated to test the gas sensing properties for ethanol.The results indicated that the doping of indium increased the sensitivity of SnO2 samples,and reduced the optimal working temperature of the gas sensor.Possible mechanisms were suggested to explain the improvement of gas sensing properties of In-doped SnO2.