光照对HF/Fe(NO_3)_3溶液中制备硅纳米线的作用研究

Investigation of photo-induced phenomenon in the silicon nanowires made by chemical etching in HF/Fe(NO_3)_3 solution

以不同掺杂浓度的单晶n型硅为衬底、金属银为催化剂、硝酸铁作为氧化剂制备硅纳米线,系统研究了光照对不同硝酸铁浓度条件下用化学腐蚀法制备硅纳米线的作用.研究发现,不同掺杂浓度的硅衬底,光照对硅纳米线长度的影响明显不同.通过对比硅纳米线的长度,发现光照对硅纳米线的形成兼具促进和溶解作用,并分别从能带结构、电化学表征和光致发光等方面对这两种作用的形成机理进行了深入讨论.

The photo-induced phenomenon in the silicon nanowires made Oy cnemlcal e^cnmg m ,lr/1.~,~/~ investigated systematically by using monocrystal n-type silicons with different doping concentrations as substrates, silver as catalyst, and iron nitrates with different concentrations as oxidants. It is found that the length of silicon nanowires is determined not only by the doping concentration of substrate and the mass of oxidant, but also by the photo-induced effect. The prepared silicon nanowires may have potential applications in green energy storage device and the substrate material for sensor. In this paper, we discuss the formation mechanism from the band structure, electrochemical characterization and photoluminescence in depth. The results in this paper provide physical theoretical evidence for the development of the method, and have important guiding significance to promote the technology.