空间隔离原子层沉积系统的研究

Optimization of Spatially-Separated Atomic Layer Deposition Conditions

原子层沉积(ALD)技术制备的薄膜在纳米尺度精确可控,并且各处薄膜厚度具有良好的均匀性。空间隔离原子层沉积(SALD)相比于时间隔离ALD技术,此工艺更易实现大面积基底沉积和连续沉积。由于SALD技术巨大的应用前景,关于SALD技术的研究成为ALD技术研究的热点之一。本文介绍了实验室自主设计搭建的SALD系统平台,以Al2O3生长评估SALD系统,实现Al2O3薄膜线性生长。并对反应温度、基底与前驱体喷头间距这两个重要的工艺参数进行了研究。SALD沉积实验表明,减小基底表面温度波动可以提高薄膜的微观形貌质量。同时,前驱体进气喷头与基底之间的距离会强烈影响基底表面的前驱体压力和前驱体间隔离效果,进而影响薄膜生长。为平衡薄膜生长均匀性和系统密封性的要求,需要选择最优的间距值。

The synthesis conditions were optimized for the continuous deposition of highly uniform, spatial-separated atomic layer on large-sized substrate. The influence of the deposition conditions of A1203, including but not limited to the fluctuation of substrate temperature, pressure, and separation between the substrate and precursor injector, on the linear growth rate wasanalytically evaluated and experimentally investigated with the lab-built reactorand atomic force microscopy ~ The msuhs show that the substrate/injector distance and stability of the substrate temperature strongly affect the quality of the AlzO3 layer. To be specific,at the separations of 3,1.5 and 0.7 mm, the growth rates in 50 cycles were found to be 0.422,0. 182 and 0.1.60 nin/cycle, respectively. Deposited with optimized substrate/injector distance and at the fairly stable substrate temperature with reduced fluctuation because of the temperature compensation of the gas flowing from the precursor injector, the spatially-separated atomic layer of Al2O3 was synthesized with atomic uniformity and smoothness.