用化学溶液沉积方法在NiW基底上制备CeO_2过渡层的研究

Fabrication of CeO_2 Buffer Layers on Ni W Substrate via Chemical Solution Deposition Process

文章采用化学溶液方法在Ni W基底上利用两步法制备了CeO2过渡层,确定了制备具有锐利双轴织构和表面质量良好的CeO2过渡层的方法及工艺条件,并利用XRD、SEM等测试手段对样品进行了分析和表征。实验结果表明,采用两步法在其第一步的升温速率为5℃/min,第二步的烧结温度为1100℃的条件下,制备出的CeO2薄膜形成了明显的面内和面外织构,且其Phi扫描和Rocking curve的半高宽值分别达到了6.68°和5.51°,通过SEM检测发现薄膜表面均匀致密。在两步法和一步法的对比过程中发现,两步法的工艺显著改善了薄膜的表面质量。

The precursor solution was prepared by chemical process. The process and technical which can fabricate CeO2 buffer layer with good biaxial texture and surface were confirmed. In this paper CeO2 buffer layer were characterized by XRD, SEM, AFM. The results show that in the two steps, heating the sample at 5 ℃/min until 450 ℃, dwell for 5 minutes, then putting the sample into the stove at 1100 ℃, dwell for 15 minutes, CeO2 film can be gained which with obvious in-plane and out-plane orientation, moreover its value of Full Width at Half Maximum（FWHM） of（111） Phi scan and Rocking curve are around 6.68°, 5.51°. It was observed by the high resolution SEM that the surface of CeO2 buffer layer is crack-free and very dense. It indicates that two steps method can improve the surface of CeO2 buffer layer.