摘要
Defects in Sb implanted Zn O single crystals have been studied by using photoluminescence(PL) spectroscopy,X-ray diffraction(XRD) and Raman scattering.Electrical properties of the samples were analyzed by Hall effect measurement.The results indicate that the annealed Sb-implanted sample is n-type with a free electron concentration of the same amplitude as the calculated implantation concentration.The well-known oxygen vacancy related deep level green PL band is suppressed in the as-implanted sample and recovers to the level close to the as-grown Zn O single crystal after annealing.These phenomena suggest that a large portion of as-implanted Sb atoms occupy oxygen lattice site in an unstable state and move to the interstitial site,forming the complex donor defect upon high temperature annealing,resulting in n-type conduction even if the implantation dose is quite high.
基金
supported by the National Natural Science Foundation of China(Grant No.61474104)
