摘要
For the materials that simultaneously exhibit piezoelectric and semiconductor properties,such as wurtzite Zn O,Ga N and In N,as well as two-dimensional single Mo S2,piezoelectric charges induced by externally applied strain can tune/control carrier transport at a metal-semiconductor contact or semiconductor junction,which is named piezotronic effect.Metal-semiconductor-metal piezotronic transistors are key piezotronic nanodevices for electromechanical applications,and they are typical nonlinear elements.In this paper,a simplified current-voltage analysis solution of piezotronic transistors is developed,which can be used for circuit design and simulation.Furthermore,the typical nonlinear circuit:Chua's circuit based on piezotronic transistors is simulated.We find that the output signal of the piezotronic transistor circuit can be switched and changed asymmetrically by externally applied strain.This study provides insight into the nonlinear properties of the piezotronic transistor,as well as guidance for piezotronic transistor nonlinear circuit application.
For the materials that simultaneously exhibit piezoelectric and semiconductor properties, such as wurtzite ZnO, GaN and InN, as well as two-dimensional single MoS2, piezoelectric charges induced by externally applied strain can tune/control carrier transport at a metal-semiconductor contact or semiconductor junction, which is named piezotronic effect. Metal-semiconduc- tor-metal piezotronic transistors are key piezotronic nanodevices for electromechanical applications, and they are typical non- linear elements. In this paper, a simplified current-voltage analysis solution of piezotronic transistors is developed, which can be used for circuit design and simulation. Furthermore, the typical nonlinear circuit： Chua＇s circuit based on piezotronic tran- sistors is simulated. We find that the output signal of the piezotronic transistor circuit can be switched and changed asymmet- rically by externally applied strain. This study provides insight into the nonlinear properties of the piezotronic transistor, as well as guidance for piezotronic transistor nonlinear circuit application.
基金
supported by the Natural Science Foundation of Gansu Province,China(Grant No.145RJZA226)
Fundamental Research Funds for the Central Universities(Grant No.lzujbky-2013-35)
Beijing Municipal Commission of Science and Technology(Grant Nos.Z131100006013005 and Z131100006013004)
