摘要
对三维(3 Dimension,3D)堆叠集成电路的硅通孔(Through Silicon Via,TSV)互连技术进行了详细的介绍,阐述了TSV的关键技术与工艺,比如对准、键合、晶圆减薄、通孔刻蚀、铜大马士革工艺等。着重对TSV可靠性分析的重要性、研究现状和热应力分析方面进行了介绍。以传热分析为例,实现简单TSV模型的热仿真分析和理论计算。最后介绍了TSV技术市场化动态和未来展望。
This paper mainly provides the detailed information on through- silicon- hole TSV（ Through Silicon Via） interconnect technology of 3D（ 3 Dimension） IC（ Integrated Circuit）. It illustrates the key technology and process of TSV, such as alignment,bonding, wafer thinning, hole etching, copper damascene etc. It also pay more emphasis on the TSV reliability analysis, the re-search status and the thermal stress analysis. Take the heat transfer analysis for example, simple thermal simulation analysis and theoretical analysis of the TSV model is performed here. Finally, we conclude the industrial dynamic TSV technology and future prospects.
出处
《电子技术应用》
北大核心
2015年第8期3-8,共6页
Application of Electronic Technique
