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Recent progress in research of f-SiC codoped with N–B–Al pairs for optoelectronics 被引量:1

Recent progress in research of f-SiC codoped with N–B–Al pairs for optoelectronics
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摘要 This paper reviewed the advances in fluorescent SiC codoped with nitrogen, boron and aluminum dopants applied to optoelectronics in recent years. The progress aspects in research of the fluorescent property, recombination theory, experiment, and construction design were discussed. The advantages that fluorescent SiC based white LEDs compared with conventional white LEDs were analyzed. It was confirmed that fluorescent SiC is a promising material to replace phosphor in the luminous field. Finally, the problems in the study of fluorescent 4H-SiC were pointed out. This paper reviewed the advances in fluorescent SiC codoped with nitrogen, boron and aluminum dopants applied to optoelectronics in recent years. The progress aspects in research of the fluorescent property, recombination theory, experiment, and construction design were discussed. The advantages that fluorescent SiC based white LEDs compared with conventional white LEDs were analyzed. It was confirmed that fluorescent SiC is a promising material to replace phosphor in the luminous field. Finally, the problems in the study of fluorescent 4H-SiC were pointed out.
出处 《Journal of Semiconductors》 EI CAS CSCD 2015年第8期42-47,共6页 半导体学报(英文版)
基金 supported by the Shanghai Rising-Star Program(No.13QA1403800) the Innovation Program of the Chinese Academy of Sciences(No.KJCX2-EW-W10) the National High-Tech R&D Program of China(Nos.2013AA031603,2014AA032602) the National Natural Science Foundation of China(No.31275136)
关键词 f-SiC OPTOELECTRONICS LED DA codoped f-SiC optoelectronics LED DA codoped
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  • 3Kamiyama S, Maeda T, Nakamura Y, et al. Extremely high quantum efficiency of donor-acceptor pair emission in N and B doped 6H-SiC. J Appl Phys, 2006, 99:093108.
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