期刊文献+

An inherent curvature-compensated voltage reference using non-linearity of gate coupling coefficient 被引量:1

An inherent curvature-compensated voltage reference using non-linearity of gate coupling coefficient
原文传递
导出
摘要 A novel current-mode voltage reference circuit which is capable of generating sub- 1 V output voltage is presented. The proposed architecture exhibits the inherent curvature compensation ability. The curvature com- pensation is achieved by utilizing the non-linear behavior of gate coupling coefficient to compensate non-linear temperature dependence of base-emitter voltage. We have also utilized the developments in CMOS process to re- duce power and area consumption. The proposed voltage reference is analyzed theoretically and compared with other existing methods. The circuit is designed and simulated in 180 nm mixed-mode CMOS UMC technology which gives a reference level of 246 mV. The minimum required supply voltage is 1 V with maximum current drawn of 9.24μA. A temperature coefficient of 9 ppm/℃ is achieved over -25 to 125 ℃ temperature range. The reference voltage varies by ±11 mV across process corners. The reference circuit shows the line sensitivity of 0.9 mV/V with area consumption of 100 × ll0μm2 A novel current-mode voltage reference circuit which is capable of generating sub- 1 V output voltage is presented. The proposed architecture exhibits the inherent curvature compensation ability. The curvature com- pensation is achieved by utilizing the non-linear behavior of gate coupling coefficient to compensate non-linear temperature dependence of base-emitter voltage. We have also utilized the developments in CMOS process to re- duce power and area consumption. The proposed voltage reference is analyzed theoretically and compared with other existing methods. The circuit is designed and simulated in 180 nm mixed-mode CMOS UMC technology which gives a reference level of 246 mV. The minimum required supply voltage is 1 V with maximum current drawn of 9.24μA. A temperature coefficient of 9 ppm/℃ is achieved over -25 to 125 ℃ temperature range. The reference voltage varies by ±11 mV across process corners. The reference circuit shows the line sensitivity of 0.9 mV/V with area consumption of 100 × ll0μm2
出处 《Journal of Semiconductors》 EI CAS CSCD 2015年第8期113-123,共11页 半导体学报(英文版)
基金 support from SMDP program, MCIT, Government of India, for providing lab facilities
关键词 voltage reference gate coupling coefficient temperature coefficient curvature compensation voltage reference gate coupling coefficient temperature coefficient curvature compensation
  • 相关文献

参考文献16

  • 1Rincon-Mora, Gabriel A. Voltage from diodes to precision high-order bandgap circuits. IEEE Press, 2002.
  • 2Gunawan M, Meijer G C, Fonderie J, et al. A curvature-corrected low-voltage bandgap reference. Journal of Solid-State Circuits,1993, 28(6): 667.
  • 3Malcovati P, Maloberti F, Fiocchi C, et al. Curvature-compensated BiCMOS bandgap with 1-V supply voltage. Journal of Solid-State Circuits, 2001, 36(7): 1076.
  • 4Rincon-Mora G, Allen P E. A1.1 -V current-mode and piecewise-linear curvature-corrected bandgap reference. Journal of Solid-State Circuits, 1998, 33(10) : 1551.
  • 5Ker M D, Chen J S. New curvature-compensation technique forCMOS bandgap reference with sub-l-V operation. IEEE Transactions on Circuits and Systems II: Express Briefs, 2006, 53(8): 667.
  • 6Leung K N, Mok P K, Leung C Y. A 2-V 23 /xA 5.3 ppm/°C 4th-order curvature-compensated CMOS bandgap reference. IEEE Custom Integrated Circuits Conference (CICC), 2002: 457.
  • 7Lee K K, Lande T S, Hafliger P D. A sub /iW bandgap reference circuit with an inherent curvature-compensation property. IEEE Transactions on Circuits and Systems I: Regular Papers, 2014, 62(1): 1.
  • 8Banba H, Shiga H, Umezawa A, et al. A CMOS bandgap reference circuit with sub-l-V operation. Journal of Solid-State Circuits, 1999, 34(5): 670.
  • 9Gray P R, Meyer R G. Analysis and design of analog integrated circuits. John Wiley & Sons, Inc. 1990.
  • 10Arora N. MOSFET modeling for VLSI simulation: theory and practice. World Scientific, 2007.

同被引文献3

引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部