HfO_2辅助法制备Si_3N_4纳米带及其光致发光性质

Hafnia Assisted Synthesis of Si_3N_4 Nanobelts and Its Photoluminescence Property

本文以氮化硅（Si3N4）和氧化铪（HfO2）为原料,在N2气氛条件下于1700℃直接热处理合成了大量的Si3N4纳米带。采用X射线衍射（XRD）、扫描电镜（SEM）、透射电镜（TEM）等方法对样品的物相、微观结构进行了表征。结果表明：合成的Si3N4纳米带厚约50 nm,长达数百微米,纯度高且结晶好。纳米带沿α-Si3N4的[201]方向生长,属于气-固（VS）生长机制。Si3N4纳米带在360-496 nm范围内具有较强的发射峰,表明所合成的Si3N4纳米带具有优异的光致发光性质,在光电纳米器件中具有潜在的应用前景。

Large quantity of silicon nitride（ Si3N4） nanobelts were synthesized by directly annealing α-Si3N4 powder in the presence of hafnia（ Hf O2） at 1700 ℃ in N2 atmosphere. The as-synthesized nanobeltes were characterized by X-ray diffraction（ XRD）,scanning electron microscopy（ SEM）,and transmission electron microscopy（ TEM）. The results show that the as-synthesized Si3N4 nanobelts have a typical thickness of about 50 nm and lengths up to hundreds of microns with high purity and perfect crystal structure. The growth direction of the Si3N4 nanobelts was [201],and vapor-solid（ VS） growth mechanism was proposed to be responsible for the formation of nanobelts. The Si3N4 nanobelts exhibited photoluminescence（ PL） emission bands in the range 360-496 nm,indicating the potential application of the nanobelts in optoelectronic nanodevices.