摘要
本文以氮化硅(Si3N4)和氧化铪(HfO2)为原料,在N2气氛条件下于1700℃直接热处理合成了大量的Si3N4纳米带。采用X射线衍射(XRD)、扫描电镜(SEM)、透射电镜(TEM)等方法对样品的物相、微观结构进行了表征。结果表明:合成的Si3N4纳米带厚约50 nm,长达数百微米,纯度高且结晶好。纳米带沿α-Si3N4的[201]方向生长,属于气-固(VS)生长机制。Si3N4纳米带在360-496 nm范围内具有较强的发射峰,表明所合成的Si3N4纳米带具有优异的光致发光性质,在光电纳米器件中具有潜在的应用前景。
Large quantity of silicon nitride( Si3N4) nanobelts were synthesized by directly annealing α-Si3N4 powder in the presence of hafnia( Hf O2) at 1700 ℃ in N2 atmosphere. The as-synthesized nanobeltes were characterized by X-ray diffraction( XRD),scanning electron microscopy( SEM),and transmission electron microscopy( TEM). The results show that the as-synthesized Si3N4 nanobelts have a typical thickness of about 50 nm and lengths up to hundreds of microns with high purity and perfect crystal structure. The growth direction of the Si3N4 nanobelts was [201],and vapor-solid( VS) growth mechanism was proposed to be responsible for the formation of nanobelts. The Si3N4 nanobelts exhibited photoluminescence( PL) emission bands in the range 360-496 nm,indicating the potential application of the nanobelts in optoelectronic nanodevices.
出处
《硅酸盐通报》
CAS
CSCD
北大核心
2015年第7期1815-1819,1824,共6页
Bulletin of the Chinese Ceramic Society
基金
国家自然科学基金重点项目(51162001
51362008)
关键词
氮化硅
纳米带
化学气相沉积
光致发光
silicon nitride
nanobelt
chemical vapor deposition
photoluminescence