硅多晶质量检测分析中的磷检电阻率曲线研究

Research on Resistivity Curve of Phosphorus Examination in Poly-silicon Quality Inspection

本文对几种典型的实测电阻率曲线进行分析,利用普凡公式和补偿后净载流子导电模型对曲线的异常进行了合理解释并用低温红外检测结果进行了对比验证。采用硼磷杂质浓度补偿净值方法计算出的数据接近实测情况,电阻率特性曲线符合普凡公式描述的规律,可作为理论特性曲线使用。

Several actual resistivity curves were analyzed, and the reasonable explaination has been developed by applying Pfann equation and the net carrier conduction model. Moreover, this explaination was verified after comparing with the LT-FTIR test results. The data computed by the net carrier method after boron and phosphorus compensated are close to the actual inspection results. In ＂addition, the resistivity distribution curve can be used as theoretical curve due to its consistent with the law of Pfann equation.