三氯氢硅生产装置设计及优化措施

Industry Design and Optimization of Trichlorosilane Plant

本三氯氢硅工业生产装置采用硅粉与氯化氢气体直接反应的常压沸腾床工艺。介绍了整个生产工艺流程;分析生产过程中的主要危险因素,提出避免危险因素出现的主要设计措施;分析了硅粉粒径、氯化氢含水量、合成炉反应温度、精馏效果对三氯氢硅产品的影响并提出优化措施。

The trichlorosilane production plant involved in the paper adopts the atmospheric ebullated bed process by direct reaction of silicon powder and hydrogen chloride gas. The whole process is introduced, the main hazard factors are analyzed and corresponding measures are put forward. The influences of silicon powder particle size, water content in hydrogen chloride, reaction temperature and distillation effect on the quality of trichlorosilane are analyzed, and some optimization measures are proposed.