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基于恒流二极管(CRD)的运算放大器低功耗研究

The research of low power consumption about OPAMP based on the CRD
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摘要 基于CRD对741双极型通用集成运放进行改进研究,通过CRD替代双极型集成运算放大器(OPAMP)输入级及偏置电路中做为恒流源的双极型器件,并利用Multisim 10和Cadence进行设计与仿真。结果表明,当电源电压改变时,双极型运算放大器输入级电流在0.290 m A到0.433 m A变化,而基于CRD的差分输入级电流恒定在0.239 m A到0.244 m A之间,且电流变化只有0.005 m A。当电源电压恒定在13 V时,双极型运算放大器偏置电流达到0.739 m A,而基于CRD偏置电路电流只有0.222 m。由此可知,基于CRD的运算放大器能实现更低功耗。 This paper is based on the research on how to improve the 741 general integrated op-amp, and used the CRD as a bipolar device of the constant current source to replace the input stage of the bipolar integrated OPAMP and bias circuit, using Multisim 10 and Cadence to design and simulate. Results show that when the supply voltage is changed, the current of the bipolar operational amplifier's input stage changes from 0.290 mA to 0.433 mA ,while the current based on the CRD changes from 0.239 mA to 0.244mA ,which only change 0.005 mA. When the supply voltage stays 13 V, the current of the bipolar integrated operational amplifier bias is 0.739 mA, while the current based on CRD bias circuit is only 0.222 mA. To be concluded, lower power can be achieved based on the CRD operational amplifier.
出处 《电子设计工程》 2015年第15期13-15,共3页 Electronic Design Engineering
基金 贵州省电子元器件产学研基地(黔教合KY[2012]029号) 半导体双向恒流二极管芯片产业化工艺攻关(黔科合GY字[2012]3030号)
关键词 CRD 恒流源 OPAMP 低功耗 CRD constant-current source OPAMP low power
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  • 1TIMOTHY H W,ALVIN C J.Compact low noise operational amplifier for a 1.2 μm digital CMOS technology[J].IEEE J Sol Sta Circ,1995,30(6):710-714.
  • 2AMON S,VRTACNIK D,RESNIK D,et al.Self-aligned gate JFET modeling and characterization[C] // IEEE AFRICON.1999:1063-1166.
  • 3RADEKA V,REHAK P,RESCIA S,et al.Implanted silicon JET on completely depleted high-resistivity devices[J].IEEE Elec Dev Lett,1989,2 (10):91-94.
  • 4SONSKY J,KOORNNEEF R N,NANVER R K,et al.Low noise p-channel JFETs for X-ray spectroscopy with silicon drift detector[C] // IEEE Nucl Sci Symp Conf.2001:204-208.
  • 5HASHEMI M M,SHEALY J B,BAARS S P,et al.High power novel hetero-junction JFETs (HJFETs) grown by MOCVD[C] // IEEE Fifth Int Conf Indium Phosphide and Related Materials.1993:375-378.
  • 6朱臻,邵志标.低噪声高精度运算放大器输入级的设计[J].微电子学,1999,29(4):297-301. 被引量:4
  • 7曾云,方亦权,颜永红,曾健平.双注入结型场效应晶体管直流特性分析[J].电力电子技术,2000,34(1):55-57. 被引量:2
  • 8路秋生,张艳杰.电源并联均流技术[J].通信电源技术,2000,17(2):12-14. 被引量:10
  • 9范爱平.JFET可变电阻的分析及应用[J].电子工程师,2001,27(7):39-43. 被引量:9
  • 10黄小平,蓝德良,孙江晖,兰海,丁网根.精密多功能恒流源[J].计量技术,2001(7):7-9. 被引量:5

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