基于Geant4的三维半导体器件单粒子效应仿真

Simulation of the Single Event Effect in 3D Semiconductor Devices Based on Geant4

在空间中,辐射粒子入射半导体器件,会在器件中淀积电荷。这些电荷被器件的敏感区域收集,造成存储器件(如静态随机存储器(SRAM))逻辑状态发生变化,产生单粒子翻转(SEU)效应。蒙特卡洛工具——Geant4能够针对上述物理过程进行计算机数值模拟,可以用于抗辐射器件的性能评估与优化。几何描述标示语言(GDML)能够在Geant4环境下对器件模型进行描述。通过使用GDML建立三维的器件结构模型,并使用Geant4进行不同能量质子入射三维器件模型的仿真。实验结果表明,在三维器件仿真中低能质子要比高能质子更容易引起器件的单粒子翻转效应。

In the space, excessive charges are generated and deposited into the devices when an energetic ion strikes towards the semiconductor devices, which are collected at the sensitive regions. This may change the logic states in circuits such as static random access memory （SRAM） , and generate sin- gle event upset （SEU） effect. The Geant4 is a very useful Mont Carlo tool to simulate the nuclear process above. Geant4 can be used for performance evaluation and optimization of radiation devices. The geometry description markup language （GDML） can be used to describe the device model in Geant4. The GDML was used to construct the 3D geometry model and the 3D geometry model with different pro- tons energies irradiation was simulated. The results show that the proton with lower energy is easier to cause the SEU effect than the proton with the higher energy.