期刊文献+

电子元器件失效分析技术及方法 被引量:12

Failure Analysis of Electronic Components
下载PDF
导出
摘要 随着电子技术的飞速发展,集成电路在各个领域的应用日益广泛,同时对集成电路提出了更高的质量要求,元器件失效分析在提高集成电路可靠性方面有着至关重要的作用。随着集成度的提高,工艺尺寸的缩小,失效分析所面临的困难也逐步增大。以实际工作为依托,对电子元器件的失效分析技术进行了研究与总结,把失效分析工作主要分成失效现象确认、样品制备和保存、电性分析和物理分析四部分,电性分析是物理分析的前提,物理分析的结果是电性分析的目的和佐证。在失效分析中,各个步骤工作配合应用,缺一不可。 As the rapid development of electronic technology, the integrated circuit is more and more widely used in various fields, and higher quality for the integrated circuit is required. Electronic components failure analysis is extremely important for improving the reliability of integrated circuit. With the raise of integration and shrinking of process dimensions, the difficulties faced by failure analysis are also gradually increasing. Base on the practical work, this paper researches and summarizes the failure analysis technology of electronic components. The failure analysis can be divided into failure phenomenon confirming, sample preparation and preservation, electrical analysis and physical analysis. The electrical analysis is the premise of physical analysis, the result of physical analysis is the purpose and evidence for electrical analysis, and analysis procedures should be cooperated each other.
作者 戴俊夫 严明
出处 《微处理机》 2015年第4期1-3,7,共4页 Microprocessors
关键词 失效分析 电子元器件 可靠性 失效机理 电性分析 物理分析 Failure Analysis Electronic Components Reliability Failure Mechanisms Electronic Analysis Physical Analysis
  • 相关文献

参考文献7

  • 1Hu C. The berkeley reliability simulator bert:an ic relia- bility simulator [ J ]. Microelectronics Journal, 1992, 23 (2) :97 - 102.
  • 2Verweij J F. VLSI reliability in Europe[ J]. Proceedings of the IEEE, 1993,81 (5) :675 - 681.
  • 3Righter A W, Hawkins C F, Soden J M, et al. CMOS IC reliability indicators and burn - in economics [ C ]. Test Conference, 1998. Proceedings., International. IEEE, 1998 : 194 - 203.
  • 4Pan Z, Holland S, Schroeder D, et al. Understanding the mechanisms of degradation and failure observed in ESD protection devices under system - level tests [ J ]. Device and Materials Reliability, IEEE Transactions on,2010, I0 (2) :187 -191.
  • 5Nikawa K, Inoue S, Morimoto K, et al. Failure analysis case studies using the IR - OBIRCH (infrared optical beam induced resistance change ) method [ C ]. Test Symposium, 1999. ( ATS 99 ) Proceedings. Eighth Asian. IEEE, 1999:394 - 399.
  • 6Wu H, Hooghan K, Cargo J. Physical failure analysis deprocessing and cross - section techniques for Cu/low - k technology [ J ]. Device and Pdaterials Reliability, IEEE Transactions on, 2004,4 ( 1 ) : 11 - 17.
  • 7Kiuchi M, Matsui S, sono Y. Mechanical characteristics of FIB deposited carbon nanowires using an electrostatic actuated nano tensile testing device [ J ]. Microelectrome- chanical Systems, Journal of,2007,16 (2) : 191 - 201.

同被引文献50

引证文献12

二级引证文献17

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部