摘要
采用磁控溅射法在玻璃基片上沉积La B6薄膜。通过改变溅射功率参数,获得最佳制备工艺条件。采用XPS、X射线衍射仪和分光光度计研究薄膜的成分、结构、晶向以及透过率。当溅射功率为44 W,氩气气压为1.5 Pa,氩气流量为27 sccm时制备的La B6薄膜表面相对平整,结构致密。XRD数据也表明,此时La B6薄膜结晶度最高且(110)晶面发生明显的择优生长。同时分光光度计结果显示:薄膜的透过率随溅射时间的增加而降低,并且最高透过率对应的波长没有发生变化。
La B6 films were deposited on glass substrate by magnetron sputtering. The sputtering power parameters were changed for optimal preparation conditions. X-ray diffraction and Spectrometer were used to study structure,transmittance and crystalline phase of the films. The La B6 films had relatively smooth surface,compact structure when deposited at the optimized parameters（ sputtering power was 44 W,argon gas pressure was 1. 5 Pa,argon gas flow rate was 27 sccm）. Results of XRD showed that the La B6 films which deposited at the optimized parameters had high crystallization and distinct（ 110） preferred orientation. Results of Spectrometer showed that transmittance of the films decreases with increasing sputtering time. And the wavelength corresponding to the maximum transmittance of the films is at the same position.
出处
《电子器件》
CAS
北大核心
2015年第3期480-484,共5页
Chinese Journal of Electron Devices
关键词
磁控溅射
六硼化镧薄膜
晶向
透光率
magnetronsputtering
lanthanum hexaboridefilm
crystalorientation
transmittance
