ICP深硅刻蚀工艺掩模的研究

Research on mask of ICP deep silicon etching process

通过使用深硅等离子刻蚀机,以C4F8和SF6为刻蚀气体,对以光刻胶与金属铝两种材料作为掩模的深硅刻蚀结果进行对比,研究了深硅刻蚀过程中掩模材料对刻蚀结果的影响。实验结果表明:以光刻胶做掩模,深硅刻蚀后硅侧壁和硅底部表面形貌平整,垂直度较之铝掩模相当;以金属铝做掩模,深硅刻蚀后深槽底部表面不平整,出现长草现象,但是刻蚀选择比大于光刻胶,两种掩模的硅刻蚀速率相当。

By using deep silicon plasma etching machine with C4 F8 and SF6 as etching gas,deep silicon etching results are compared between the photoresist mask and the metal aluminum mask,the influence of mask material on results in process of deep silicon etching is studied. Experimental results show that,with photoresist mask,the surface morphology of silicon side wall and silicon bottom are smooth after deep silicon etching,verticality is almost the same compared with aluminum mask;while with metal aluminum mask,the silicon bottom surface is uneven with rough phenomenon,but etching selection ratio is larger than the photoresist,silicon etching rate of the two masks is similar to each other.