Al_2O_3衬底上制备非晶碳薄膜及其场发射特性研究

Field Emission Property of Amorphous Carbon Fabricated on the Al_2O_3 Ceramic

在Al2O3陶瓷衬底上用直流磁控溅射技术沉积过渡层Mo,再利用微波等离子体化学沉积系统在Mo过渡层上制备非晶碳薄膜,利用X线衍射(XRD)、拉曼(Raman)和电镜扫描(SEM)技术分析了薄膜的结构和表面形貌,测试了所制备样品的场发射及其发光特性,研究了薄膜的场发射特性。结果表明,所制备的薄膜为非晶碳和Mo2C的复合薄膜。所制备的薄膜具有较好的场发射特性,开启场强为0.74V/μm,1.8V/μm的场强下发射电流密度达到6 800μA/cm2,且发光点分布均匀,利用迭代法计算了所制备薄膜的有效场发射面积和其功函数。

Mo layer was deposited on the Al2O3 ceramics by the direct current magnetron sputtering technique. Amorphous carbon thin film was then fabricated on the Mo layer by the microwave enhanced plasma chemical vapor deposition system. The structure and surface morphology were analyzed by XRD,Raman and SEM. The field emis- sion and luminescence properties of the film were studied. Results indicated that the film had interesting field emis- sion characters. The turn on field emission was 0.74 V/μm and the highest emission current density was obtained of 1.8 V/μm at 6 800 μA/cm^2. The luminous points were uniformly distributed. The effective emission area and work function of the film were calculated by the iteration method.