残影不良分析及改善对策研究

Analysis and research of slow charging

通过对大量残影不良样品进行分析,找到了残影不良产生的原因,并基于分析结果设计了改善残影的实验。通过分析发现:残影不良产生的原因是彩膜侧像素与黑矩阵之间的段差过大,在摩擦工程时段差过大区域形成了摩擦弱区,摩擦弱区内的液晶分子配向较弱,导致不良产生。为降低残影不良进行实验,结果显示:在彩膜侧加覆盖层可以有效降低残影不良的发生率,但不适用于量产;通过采用高预倾角的配向膜材料,同时控制配向膜工程到摩擦工程的时间,可使残影不良发生率由28.2%降低至0.2%,为企业的稳定高效生产奠定了基础。

By analyzing massive slow charging samples,the cause of slow charging was found,and on this basis,experiments were designed to improve the defect.The analysis shows that the cause of slow charging was the large altitude variance between color filter pixel and black matrix,which would cause rubbing weak area in rubbing process.The result of experiments showed that adding over coat on color filter could obviously decrease slow charging,but it was not suitable for production.Furthermore,by using high pretilt angle polyemid,and controlling delay time between polyemid process and rubbing process,the slow charging ratio could be effectively decreased from 28.2% to 0.2%,laying the foundation for a stable and efficient production of enterprises.