抗单粒子翻转的双端口SRAM定时刷新机制研究

Research on Periodical Refresh of SEU-Hardened Dual-Port SRAM

在空间辐射环境下,存储单元对单粒子翻转的敏感性日益增强。通过比较SRAM的单粒子翻转效应相关加固技术,在传统EDAC技术的基础上,增加少量硬件模块,有效利用双端口SRAM的端口资源,提出了一种新的周期可控定时刷新机制,实现了对存储单元数据的周期性纠错检错。对加固SRAM单元进行分析和仿真,结果表明,在保证存储单元数据被正常存取的前提下,定时刷新机制的引入很大程度地降低了单粒子翻转引起的错误累积效应,有效降低了SRAM出现软错误的概率。

The SEU sensitivity of storage cell increases seriously in the space radiation environment. Compared with the SEU-hardened techniques for SRAM, a new periodical refresh mechanism was proposed in the cost of adding few hardware resources based on EDAC technique, taking advantage of dual-port SRAM. Error detecting and correcting periodically to the storage cell had been realized. Theoretic analysis and simulation results showed that the introduction of periodical refresh on the radiation-hardened SRAM had reduced the probability of soft error due to the accumulation of SEU under the premise of accessing data in the memory cell correctly.