P波段900W脉冲功率LDMOS器件的研制

Research and Manufacture of the P-Band 900 W Pulsed Power LDMOS

设计并制作了一种50V窄脉冲工作的P波段大功率横向扩散金属-氧化物-半导体场效应晶体管(LDMOSFET)。在P波段、工作电压50V、工作脉宽100μs和占空比10%的工作条件下,该器件的带内输出功率大于900 W,功率增益大于18dB,漏极效率大于50%,抗驻波失配比大于5∶1,表现出了良好的性能。

A kind of radio frequency power laterally diffused metal oxide semiconductor field effect transistor （LDMOSFET） was designed and manufactured. The results showed that the device presented good performances of the output power of more than 900 W with at least 18 dB power gain, more than 50% drain efficiency and endured over 5 ： 1 VSWR at P-band under the conditions of 50 V working voltage,100 9s pulse width and 10% duty cycle.