氧化镍存储薄膜微细图形的研究

Electical Property of NiO_x Resistive Memory Thin Films and Study of Fine Pattern Fabrication

以醋酸镍为原料,乙二醇甲醚为溶剂,苯酰丙酮为化学修饰剂,采用溶胶-凝胶法与化学修饰法相结合的方法制备感光性氧化镍基溶胶及凝胶膜,利用紫外-可见光分光计和红外光谱仪等手段对凝胶膜进行分析表征,结果表明:此凝胶膜具有紫外感光特性。利用其感光特性,可以对Ni Ox凝胶膜进行微细加工。采用掩模法以紫外光为曝光光源对Ni Ox凝胶膜进行微细加工,结果表明此凝胶膜具有良好的微细加工特性。同时,还可采用无掩模的激光干涉技术,利用氪离子激光器双光束一次曝光工艺制备了线密度为1200l/mm的光栅。

We used nickelous acetate（Ni（CH3COO）2＆#183;4H2O）and ethylene glycol monomethyl ether（CH3OCH2 CH2OH）as starting materials while benzytone（BzAcH）as a chemical modifier,thus photosensitive gel films were prepared by the dip-coating technique with chemical modification. Gel films were characterized by spectrophotome-ter and infrared spectrometer. Results indicated that these films showed high photosensitivity. Be based upon their photo-sensitivity,NiOx fine patterning were prepared. NiOx fine patterning was prepared by UV Mask method and results suggested the films had good performance in micro-fabrication. Meanwhile NiOx gratings with the line density of 1200 l/mm could be fabricated by maskless laser interference method.