空气对InAs纳米线场效应晶体管性能的影响

Influence of Air on the Performance of InAs Nanowire FET

制备基于单根In As纳米线的平面场效应晶体管纳米器件,测量并研究器件在真空、空气、氮气、氧气、水汽和大气污染成分二氧化氮中的电学特性。与真空中的结果相比,空气中器件的阈值电压向正栅压方向偏移,关态电流上升,开关比下降。空气的主要成分氮气对器件性能没有可分辨的影响;氧气的影响很弱;水汽使关态电流上升,开关比下降,但使阈值电压向负栅压方向偏移。研究表明,大气污染成分二氧化氮使器件的阈值电压向正栅压方向偏移,开关比不变。研究结果表明,空气对器件性能的影响是水汽和二氧化氮共同作用的结果。

Planar field effect transistor nanodevices were fabricated based on individual In As nanowires. The electrical performance of the devices was measured and studied in vacuum, air, N2, O2, H2 O and pollutant in air, NO2. Compared with the performance in vacuum, the performance of the device in air changes, e.g. the threshold voltage of the device（VT） shifts to positive direction, the off-state current（Ioff） increases and the on-off ratio（Ion/Ioff） decreases in air. The main air component, N2, does not have distinguishable impact on the performance of the device. The effect of O2 is very weak. H2 O increases Ioff, decreases Ion/Ioff and shifts VT negatively. The component of the pollutant in air, NO2 is found to bring a positive shift of VT, and an unchanged Ion/Ioff.