摘要
采用电子束蒸发镀膜工艺制备一种新型非晶半导体MgSnO薄膜。薄膜在可见光区具有较高的透过率,其平均透过率范围在86.14～92.05%,薄膜的光学带隙随着Mg含量的增加而增大。霍尔效应测试表明MgSnO薄膜为n型半导体,Mg含量可在一定程度上控制薄膜的载流子浓度,MgSnO薄膜的载流子迁移率最高为1.59cm2 V-1s-1。
Amorphous MgSnO thin films were prepared by e-beam evaporation technique.The films exhibited a high transmittance in the visible region.The average optical transmittance was in the range from 86.14%to 92.05%.The MgSnO thin films were n-type semiconductor.The carrier concentration was controlled by Mg content in the films.The highest Hall mobility of prepared film was 1.59cm2 V-1s-1.
出处
《光电子技术》
CAS
2015年第1期70-72,共3页
Optoelectronic Technology
基金
国家自然科学基金资助项目(10974136)
