摘要
The structural and electronic properties of N-doped zigzag graphene nanoribbons （N-ZGNRs） adsorbed on Si（001） substrates are investigated with first-principles density functional cMculations. Compared with the free-standing N-ZGNRs, the energy difference between the substitutional doping at the edge and the inner sites is significantly decreased on the Si substrate. The distribution of the extra charge induced by the N substitutional .dopant keeps the Friedel oscillation feature, and is a main effect that influences the C-Si bonding strength. When N is doped in regions with high C-Si bond densities, the strain induced by the dopant also plays an important role in determining the C-Si bonding interactions. Similar to the undoped case, the strong N-ZGNR/Si interaction destroys the antiferromagnetic coupling of the edge states in N-ZGNR, leading to a non-magnetic ground state for the N-ZGNR/Si heterostructures.
The structural and electronic properties of N-doped zigzag graphene nanoribbons （N-ZGNRs） adsorbed on Si（001） substrates are investigated with first-principles density functional cMculations. Compared with the free-standing N-ZGNRs, the energy difference between the substitutional doping at the edge and the inner sites is significantly decreased on the Si substrate. The distribution of the extra charge induced by the N substitutional .dopant keeps the Friedel oscillation feature, and is a main effect that influences the C-Si bonding strength. When N is doped in regions with high C-Si bond densities, the strain induced by the dopant also plays an important role in determining the C-Si bonding interactions. Similar to the undoped case, the strong N-ZGNR/Si interaction destroys the antiferromagnetic coupling of the edge states in N-ZGNR, leading to a non-magnetic ground state for the N-ZGNR/Si heterostructures.
基金
Supported by the National Natural Science Foundation of China under Grant No 11204296
the National Basic Research Program of China under Grant No 2013CB933304
