摘要
Tile phase change material of Ge-doped Sb2 Te3 is shown to have higher crystallization temperature and better thermal stability compared with pure Sb2Te3. Ge0.11Sb2Te3 alloys are considered to be a potential candidate for phase change random access memories, as proved by a higher crystallization temperature, a better data retention ability, and a faster switching speed in comparison with those of Ge2Sb2 Tes. In addition, Ge0.11Sb2 Te3 presents extremely rapid reverse switching speed （lOns）, and up to 105 programming cycles are obtained with stable set and reset resistances.
Tile phase change material of Ge-doped Sb2 Te3 is shown to have higher crystallization temperature and better thermal stability compared with pure Sb2Te3. Ge0.11Sb2Te3 alloys are considered to be a potential candidate for phase change random access memories, as proved by a higher crystallization temperature, a better data retention ability, and a faster switching speed in comparison with those of Ge2Sb2 Tes. In addition, Ge0.11Sb2 Te3 presents extremely rapid reverse switching speed （lOns）, and up to 105 programming cycles are obtained with stable set and reset resistances.
基金
Supported by the Strategic Priority Research Program of the Chinese Academy of Sciences under Grant No XDA09020402
the National Key Basic Research Program of China under Grant Nos 2013CBA01900,2010CB934300,2011CBA00607 and2011CB932804
the National Integrate Circuit Research Program of China under Grant No 2009ZX02023-003
the National Natural Science Foundation of China under Grant Nos 61176122,61106001,61261160500 and 61376006
the Science and Technology Council of Shanghai under Grant Nos 12nm0503701,12QA1403900,13ZR1447200 and 13DZ2295700
