摘要
A kind of non-conjugated polymer memory material, poly（N-vinylcarbazole）, is used to investigate silicon-based storage performance with the fact that the one-bit storage cell circuit consists of a sandwiched indium-tin- oxide/poly（N-vinylcarbazole）/Al and an n-type metal-oxide-semiconductor field effect transistor. The memristor on the basis of a nano poly（N-vinylcarbazole） film exhibits electrical bistability and flash memory features, for which the switching-on voltage is -1 V and the on/off current ratio approaches 104. At ambient temperature, the memory circuit possesses higher reliability within the programming time 104 s. The output voltage is dose to 0.5 V during logic 1, while it is approximately 14mV in the logic 0. This paves the way for the study on the technology concerning the binary encoding and data storage of nonvolatile memories.
A kind of non-conjugated polymer memory material, poly（N-vinylcarbazole）, is used to investigate silicon-based storage performance with the fact that the one-bit storage cell circuit consists of a sandwiched indium-tin- oxide/poly（N-vinylcarbazole）/Al and an n-type metal-oxide-semiconductor field effect transistor. The memristor on the basis of a nano poly（N-vinylcarbazole） film exhibits electrical bistability and flash memory features, for which the switching-on voltage is -1 V and the on/off current ratio approaches 104. At ambient temperature, the memory circuit possesses higher reliability within the programming time 104 s. The output voltage is dose to 0.5 V during logic 1, while it is approximately 14mV in the logic 0. This paves the way for the study on the technology concerning the binary encoding and data storage of nonvolatile memories.
基金
Supported by the China Postdoctoral Science Foundation under Grant No 2011M50070
