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SESAM无损伤运转的大功率高重复频率皮秒激光器 被引量:2

High-Power and High Repetition-Rate Picosecond Laser with No Damage in SESAM
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摘要 提出一种可实现大功率输出、重复频率为80 MHz的皮秒锁模振荡器,当抽运功率为22.4 W时,可实现功率为5.1 W,频谱信噪比大于60 d B,脉冲宽度为23.7 ps的皮秒脉冲的稳定输出。通过选择合理的半导体可饱和吸收镜(SESAM)参数和合适的腔型,实现SESAM长期无损伤运转并进行500 h的实验验证。采用888 nm激光二极管(LD)端面抽运Nd∶YVO4晶体的两级功率放大系统将皮秒锁模振荡器的功率提升至44 W。放大系统的光-光转换效率大于25%,输出光具有良好的光斑模式,光束质量因子M2<1.5。 A high-power picosecond mode-locked Nd∶YVO4laser system with high repetition-rate of 80 MHz is reported. When the pump power is 22.4 W, the oscillator provides the output power of 5.1 W with signal-tonoise ratio more than 60 d B and a pulse duration of 23.7 ps. The semiconductor saturable- absorber mirror(SESAM) of oscillator can work for more than 500 h without any damage by selecting reasonable SESAM parameters and suitable cavity. The power is amplified to 44 W by two stages of power amplifier end-pumped by a continuous- wave 888 nm laser diode(LD). Optical- optical conversion efficiency of amplified system is more than 25%. The beam quality factor M2 after amplification is less than 1.5.
出处 《中国激光》 EI CAS CSCD 北大核心 2015年第8期59-65,共7页 Chinese Journal of Lasers
基金 国家重大科学仪器设备开发专项(2011YQ120024) 北京市科委科技新星计划(xx2012084)
关键词 激光器 皮秒锁模振荡器 半导体可饱和吸收镜 激光放大 888 nm抽运 lasers picosecond mode-locked oscillator semiconductor saturable-absorber mirror laser amplification 888 nm pumping
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  • 1陈檬,张丙元,李港,王勇刚.半导体可饱和吸收镜被动锁模Nd∶YAG激光器的研究[J].中国激光,2004,31(6):646-648. 被引量:21
  • 2张丙元,李港,陈檬,于海娟,夏军海,郭晓萍,任锋,王勇刚,马骁宇.电光腔倒空激光二极管抽运Nd∶YAG锁模激光器[J].光学学报,2005,25(3):356-358. 被引量:3
  • 3于海娟,李港,陈檬,居桂方,王勇刚,张志刚.用半导体可饱和吸收镜进行LD泵浦Yb∶YAG激光器被动锁模研究[J].光子学报,2005,34(5):648-651. 被引量:6
  • 4[1]Keller U, Miller D A B, Boyd G D, et al. Solid-state low loss intracavity saturable absorber for Nd:YLF lasers: An antiresonant semiconductor Fabor-Perot saturable absorber[J]. Opt Lett, 1992, 17(7): 505-508.
  • 5[2]Keller U, Weingarten Kurt J, Kaertner Franz X, et al.Semi-conductor saturable absorber mirrors (SESAM) for femtosecond to nanosecond pulse generation in solid-state lasers[J]. IEEE J Quantum Electron, 1996, 2(3): 435-453.
  • 6[4]Du D, Liu X, Korn G, et al. Laser-induced breakdown by impact ionization SiO2 with pulse widths from 7 ns to 150 fs[J]. Appl Phys Lett, 1994, 64(23): 3 071-3 073.
  • 7[5]Lenzner M, Kruger J, Sartania S, et al. Femtosecond optical breakdown in dielectrics [ J ]. Phys Rev Lett, 1998, 80(18): 4 076-4 079.
  • 8[6]Venkatakrishnan K, Tan B, Stanley P, et al. The effect of polarization on ultrashort-pulsed laser ablation of thin metal films [ J ]. Journal of Applied Physics, 2002, 92(3):1 604-1 607.
  • 9[7]Blair G A, Kamps T, Lewin H, et al. R&D towards a laser based beam size monitor for future linear collider [ A ]. In:Proceedings of EPAC 2002[ C]. Paris, 2002. 1 912-1914.
  • 10Spuhler. Compact Ultrafast Solid-State Lasers :[ D ] .Zurich: Eidgenisssische Techn, Hochshule Zarich, 2001.

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